, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 pnp silicon af switching transistor BCX13 ? for general af applications ? high breakdown voltage ? low collector-emitter saturation voltage ? complementary type: bcx 12 (npn) type bcx 13 marking bcx 13 maximum ratings thermal resistance pinc 1 c ^onfigui 2 b ration 3 e package1) to-92 parameter collector-emitter voltage collector-base voltage emitter-base voltage collector current peak collector current base current peak base current total power dissipation, 7c = 66 c junction temperature storage temperature range symbol fceo fcbo febo 7c /cm ib ibm plot 7] tstg values 125 125 5 800 1 100 200 625 150 -65... + 150 unit v ma a ma mw c junction - ambient junction - case2) 7?thja rtti jg <200 <135 k/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
BCX13 electrical characteristics at ta = 25 c, unless otherwise specified. parameter symbol values min. typ. max. unit dc characteristics for transistor t1 collector-emitter breakdown voltage 7c= 10ma, /e = 0 collector-base breakdown voltage 7c= 100ma,/b = 0 emitter-base breakdown voltage k= 10 ma, 7c=0 collector-base cutoff current fcb = 100v, 7e = 0 fcb = 100v, 7e = 0, ja = 150 c emitter cutoff current feb = 4 v dc current gain1) 7c = 1 ma, fce = 1 v 7c=10ma, fce = 1v 7c= 100ma, fce = 1v 7c = 200 ma, fce = 1 v collector-emitter saturation voltage1* 7c = 500 ma. ib = 50 ma base-emitter saturation voltage1' 7c = 500 ma, 7e = 50 ma f(br)ceo f(br)cbo f(br)ebs 7cbo /ebo hfe fcesat fbesat 125 125 5 - ? 25 50 63 40 ? ? ? ? ? ? ? _ ? ? ? ? ? 100 10 100 _ 1.0 1.6 v na ma na v ac characteristics transition frequency 7c = 20 ma, fce = 5 v, /= 20 mhz output capacitance fcb= 10v, /= 1 mhz / c obo ? ? 120 12 ? ? mhz pf
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